High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide
نویسندگان
چکیده
Doped graphene could be of use in next-generation electronic and photonic devices. However, chemical doping cannot precisely controlled the material leads to external disorder that diminishes carrier mobility conductivity. Here we show can efficiently doped using a monolayer tungsten oxyselenide (TOS) is created by oxidizing diselenide. When TOS direct contact with graphene, room-temperature 2,000 cm2 V−1 s−1 at hole density 3 × 1013 cm−2 achieved. Hole also inserting diselenide interlayers between where increasing layers reduces disorder. With four layers, value around 24,000 observed, approaching limit set acoustic phonon scattering, resulting sheet resistance below 50 Ω sq−1. To illustrate potential our approach, TOS-doped used as transparent conductor near-infrared (1,550 nm) silicon nitride waveguide ring resonator. A oxyselenide, layer diselenide, dope leading V–1 s–1 cm–2.
منابع مشابه
Charge transport and mobility in monolayer graphene
*Correspondence: [email protected] 1Dipartimento di Matematica e Informatica, Università di Catania, Viale A. Doria 6, Catania, 95125, Italy Full list of author information is available at the end of the article Abstract For electron devices that make use of innovative materials, a basic step in the development of models and simulation computer aided design (CAD) tools is the determination of...
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ژورنال
عنوان ژورنال: Nature electronics
سال: 2021
ISSN: ['2520-1131']
DOI: https://doi.org/10.1038/s41928-021-00657-y